The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Jun. 05, 2015
Applicant:

Semilab Semiconductor Physics Laboratory Co., Ltd., Budapest, HU;

Inventors:

Jacek Lagowski, Tampa, FL (US);

Marshall Wilson, Tampa, FL (US);

Alexandre Savtchouk, Tampa, FL (US);

Carlos Almeida, Tampa, FL (US);

Csaba Buday, Balatonalmádi, HU;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 33/00 (2006.01); G01R 29/12 (2006.01); G01N 27/22 (2006.01);
U.S. Cl.
CPC ...
G01N 33/00 (2013.01); G01N 27/221 (2013.01); G01R 29/12 (2013.01); G01N 2033/0095 (2013.01);
Abstract

An example method of characterizing a semiconductor sample includes measuring an initial value, V, of a surface potential at a region of a surface of the semiconductor sample, biasing the semiconductor sample to have a target surface potential value (V) of 2V or less, and depositing a monitored amount of corona charge (ΔQ) on the region of the surface after adjusting the surface potential to the target value. The method also includes measuring a first value, V, of the surface potential at the region after depositing the corona charge, determining the first change of surface potential (ΔV=V−V), and determining the first capacitance value C=ΔQ/ΔV, and characterizing the semiconductor sample based on V, V, ΔV, ΔQand C.


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