The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

May. 27, 2021
Applicant:

Semilab Semiconductor Physics Laboratory Co., Ltd., Budapest, HU;

Inventors:

Marshall Wilson, Tampa, FL (US);

Bret Schrayer, Tampa, FL (US);

Alexandre Savtchouk, Tampa, FL (US);

Dmitriy Marinskiy, Tampa, FL (US);

Jacek Lagowski, Tampa, FL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G01R 31/265 (2006.01); G01R 1/067 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2656 (2013.01); G01R 1/06727 (2013.01); G01R 31/2601 (2013.01);
Abstract

Methods of characterizing electrical properties of a semiconductor layer structure on a wafer with topside semiconductor layers on an insulating or semi-insulating substrate, the semiconductor layer structure including a high electron mobility transistor (HEMT) heterostructure with a two-dimensional electron gas (2DEG) at a heterointerface between the semiconductor layers of the heterostructure. The methods include: (a) physically contacting the topside of the wafer within a narrow border zone at an edge of the wafer with a flexible metal cantilever electrode of a contacting device, wherein the flexible metal cantilever electrode contacts one or more of the semiconductor layers exposed at the narrow border zone so that the flexible metal cantilever electrode is in electrical contact with the 2DEG; and (b) applying corona charge bias and measuring a surface voltage of the semiconductor layers using a non-contact probe while maintaining the electrical contact with the 2DEG. The physical contacting to the topside of the wafer is noncontaminating and noninvasive to the semiconductor layers.


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