Yokohama, Japan

Itsuko Sakai

This inventor holds 18 USPTO granted patents, primarily in Plasma Processing Technology. Top assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited, Tokyo Electron Yamanashi Limited. Active years: 1994-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Itsuko Sakai. Retrieved from https://idiyas.com/inventor/itsuko-sakai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 61.1

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 217(Granted Patents)


Location History:

  • Kawasaki, JP (1996)
  • Chiryu-shi, Aichi-ken, JP (2000)
  • Kanagawa-ken, JP (2004)
  • Kanagawa, JP (1994 - 2009)
  • Yokohama, JP (1998 - 2013)

Company Filing History:


Years Active: 1994-2013

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Areas of Expertise:
Semiconductor Device
Plasma Processing
Edge Detection
Gas Recirculation
Silicon Etching
Cleaning Method
Charged Beam Apparatus
High Temperature Superconductive Material
Processing Method
Vacuum System
Plasma Treatment
Capacitive Coupling
18 patents (USPTO):Explore Patents

Title: Inventor Itsuko Sakai: Revolutionizing Technology in Yokohama

Introduction: Itsuko Sakai is a pioneering inventor based in Yokohama, Japan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Itsuko Sakai holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing her innovative mindset and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Itsuko Sakai has worked with leading tech companies in Japan, spearheading projects that have pushed the boundaries of technological advancements.

Collaborations: Itsuko Sakai has collaborated with renowned research institutions and universities in Japan, fostering a culture of innovation and knowledge-sharing within the tech community.

Conclusion: Itsuko Sakai's dedication to innovation and her relentless pursuit of technological excellence continue to inspire the next generation of inventors and engineers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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