Kabushiki Kaisha Toshiba

Tokyo Electron Limited

Other

Tokyo Electron Yamanashi Limited

Itsuko Sakai

Tokuhisa Ohiwa

Haruo Okano

Kazuya Nagaseki

Nobuo Hayasaka

Shinji Himori

Makoto Sekine

Takayuki Sakai

Toshihiro Hayami

Yukimasa Yoshida

Takuto Inoue

Akihiro Kojima

Munehiro Ogasawara

Hiroshi Kubota

Yuichiro Yamazaki

Keiji Horioka

Mie Matsuo

Rempei Nakata

Ikuko Inoue

Kazuhiro Tomioka

Kazuyoshi Sugihara

Hisataka Hayashi

Hiroyuki Kawasaki

Masahiro Ogasawara

Shoichiro Matsuyama

Masashi Saito

Koichiro Inazawa

Yusuke Hirayama

Atsuko Kawasaki

Kazutaka Akiyama

Kouichiro Inazawa

Naruhiko Kaji

Yoshio Ishikawa

Takashi Yoda

Masahiro Sekiguchi

Masayuki Dohi

Etsuji Ito

Jun Takamatsu

Takanori Mimura

Kenichiro Hagiwara

Tomoki Suemasa

Takaaki Nezu

Akihiro Hori

Hiroki Matsumaru

Katsumi Horiguchi

Tsuyoshi Ono

Noriaki Imai

Kazuo Eguchi

Yoshiteru Koseki

Kenji Ohtoshi

Shunji Kikuchi

Masayuki Narita

Yoshikazu Sugiyasu

Yoshifumi Sakai

Hiroki Neko

Koushi Tozuka

Kazuhiko Nakadate

According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

Semiconductor device and manufacturing method thereof

An edge detection method includes preparing a transparent substrate which includes a first main face having a first main region and a first peripheral region and a second main face having a second main region and a second peripheral region, the first peripheral region having an inclination angle of &#x3b8;aand the second peripheral region having an inclination angle of &#x3b8;a, causing measuring light to enter the first peripheral region from a direction perpendicular to the first main region, detecting a non-emitting region where the measuring light is not emitted from the second peripheral region, and detecting an edge of the transparent substrate on the basis of the non-emitting region, wherein if a refractive index of the transparent substrate is n, the inclination angles &#x3b8;aand &#x3b8;asatisfy the following expression:sin(&#x3b8;1+&#x3b8;2&#x2212;arcsin(sin &#x3b8;1/))&#x2267;1.

Edge detection method for transparent substrate by detecting non-light-emitting region of transparent substrate

A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

Capacitive coupling plasma processing apparatus

In order to facilitate control of a circulating gas, in a processing apparatushaving a showerheadfor supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pumpfor evacuating the processing gas from the processing chamberand a circulating gas pipingfor returning at least a portion (circulating gas Q) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Qsupplied from a gas sourceinto the processing chamber via a plurality of primary gas outlet holes hand a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

Processing method for conservation of processing gases

A low-cost plasma processing apparatus which permits reduction of the cost, as well as reduction of the loss of transmitted power. The plasma processing apparatushas an apparatus main bodyand auxiliary equipment. The auxiliary equipmentis comprised of a power supply apparatusthat supplies power to a processing chamber, and a plurality of dry pumpsand, and so on. The power supply apparatusis comprised of a matching unit, an RF amplifierthat is connected to the matching unitvia a coaxial cable, and a power controllerhaving a DC amplifiertherein. The RF amplifieris formed in a separate body to the DC amplifierand disposed in a position away from the DC amplifierand close to the matching unit, and is connected to the DC amplifiervia an ordinary cable

Plasma processing apparatus

There is provided a plasma treatment apparatus that carries out plasma treatment on an article, with which it is possible to make the plasma density uniform. A plasma treatment vessel houses a semiconductor wafer and a treatment gas is introduced into the plasma treatment vessel. A lower electrode is provided inside the plasma treatment vessel and the semiconductor wafer is placed onto the lower electrode. An upper electrode that has a plurality of holes formed therein and has a dome shape that is upwardly convex, is provided above the lower electrode in the plasma treatment vessel. A height of the upper electrode from the lower electrode becomes greater from an outside of the lower electrode to a center of the lower electrode.

Plasma treatment apparatus

A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process chamber is introduced again into the process chamber. A specified value is obtained by monitoring the state of the plasma of the process gas within the process chamber, and the introducing conditions of the process gas into the process chamber are controlled to adjust a predetermined property value to a regulated value.

Plasma processing method

This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.

High speed silicon etching method

A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from the first exhaust mechanism, a back pressure adjusting mechanism interposed between the first exhaust mechanism and the second exhaust mechanism to adjust a back pressure of the first exhaust mechanism, and a gas circulating piping which is configured to combine another portion of the gas that has been discharged from the first exhaust mechanism with a processing gas supplied from the gas supply piping, wherein the gas feeding piping has a larger inner diameter than that of the gas supply, or the processing gas is introduced into the first exhaust mechanism, or a first heater is provided to heat at least part of the circulating route.

Gas circulating-processing apparatus

Gas recirculation flow control method and apparatus for use in vacuum system

A plasma processing apparatus comprises a grounded housing, a thin RF plate electrode, an opposite electrode facing the RF plate electrode, and a RF power source for applying a radio frequency to either the RF plate electrode or the opposite electrode to produce plasma between the two electrodes. If the radio frequency applied to the electrode is f (MHz), the parasitic capacity C (pF) between the grounded portion of the housing and a conductive portion through which the radio frequency propagates is less than 1210*f . The thickness of the RF plate electrode is 1 mm to 6 mm, and it is supported by a heat sink. The heat sink has a coolant passage in the proximity to the RF plate electrode. The heat sink also has a groove or a cavity in addition to the coolant passage, thereby reducing the value of the dielectric constant of the heat sink as a whole.

Plasma processing apparatus with reduced parasitic capacity and loss in RF power

There is disclosed a semiconductor processing apparatus comprising a process chamber treating a substrate, a process gas feeder feeding a process gas to the process chamber, a first vacuum pump exhausting the process chamber, a second vacuum pump inhaling gas on an exhaust side of the first vacuum pump, and a circulation path circulating at least a part of the process gas exhausted from the process chamber via the first vacuum pump into the process chamber, wherein the circulation path is provided with a dust trapping mechanism, the dust trapping mechanism being capable of substantially maintaining a conductance of the circulation path before and after the capture of dust.

Method for manufacturing a semiconductor device using recirculation of a process gas

In a processing chamber of an etching apparatus a lower electrode and an upper electrode grounded through a processing container are disposed oppositely to each other. A first high frequency power supply section composed of a first filter, a first matching device, and a first power source, and a second high frequency power supply section composed of a second filter, a second matching device, and a second power source are connected to the lower electrode. A superimposed power of two frequencies composed of a first high frequency power component of at least 10 MHz produced from the first power source and a second high frequency power component of at least 2 MHz produced from the second power source is applied to the lower electrode. Ions in the plasma do not accelerated by changes of electric field in the processing chamber, but are accelerated by a self-bias voltage and collide only against a wafer on the lower electrode.

There are disclosed a high temperature superconductive material which can be plastically deformed, processed optionally into predetermined configurations and industrially mass produced and a method of manufacturing a formed body of the high temperature superconductive material. Mixed is a powder raw material which is mainly composed of: 10 to 50 mol % of at least one amide or nitride of alkali metal of Li, Na or K; 10 to 60 mol % of cyanide containing at least one metal selected from aluminum, copper, silver or gold; 5 to 50 mol % of at least one pure metal selected from aluminum, copper, silver or gold; and 10 mol % or less of at least one alkaline earth metal selected from Be, Mg, Ca, Sr or Ba. The powder raw material is pressed, and heated and sintered at the temperature of 673 K to 1553 K. In this manner, obtained is the plastically deformable high temperature superconductive material which can be optionally processed through forging, rolling and the like. Also, the obtained high temperature superconductive material has a critical temperature of 40 K to 80 K and a current density of 10000 A/cm.sup.2 or more.

Plastically deformable high temperature superconductive material and

A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B. The central plane of the magnetic field B is shifted upwards from the target surface of the wafer, such that the magnetic force lines of the magnetic field intersect with the target surface of the substrate.

Plasma process apparatus

Growing community of inventors

Yokohama, Japan

Itsuko Sakai