The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2013
Filed:
Sep. 03, 2010
Atsuko Kawasaki, Yokohama, JP;
Kenichiro Hagiwara, Yokohama, JP;
Ikuko Inoue, Yokohama, JP;
Kazutaka Akiyama, Matsudo, JP;
Itsuko Sakai, Yokohama, JP;
Mie Matsuo, Kamakura, JP;
Masahiro Sekiguchi, Yokohama, JP;
Yoshiteru Koseki, Kitakami, JP;
Hiroki Neko, Kitakami, JP;
Koushi Tozuka, Hanamaki, JP;
Kazuhiko Nakadate, Yokohama, JP;
Takuto Inoue, Kitakami, JP;
Atsuko Kawasaki, Yokohama, JP;
Kenichiro Hagiwara, Yokohama, JP;
Ikuko Inoue, Yokohama, JP;
Kazutaka Akiyama, Matsudo, JP;
Itsuko Sakai, Yokohama, JP;
Mie Matsuo, Kamakura, JP;
Masahiro Sekiguchi, Yokohama, JP;
Yoshiteru Koseki, Kitakami, JP;
Hiroki Neko, Kitakami, JP;
Koushi Tozuka, Hanamaki, JP;
Kazuhiko Nakadate, Yokohama, JP;
Takuto Inoue, Kitakami, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.