The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Sep. 13, 2001
Takanori Mimura, Nirasaki, JP;
Kazuya Nagaseki, Nirasaki, JP;
Itsuko Sakai, Yokohama, JP;
Tokuhisa Ohiwa, Kawasaki, JP;
Takanori Mimura, Nirasaki, JP;
Kazuya Nagaseki, Nirasaki, JP;
Itsuko Sakai, Yokohama, JP;
Tokuhisa Ohiwa, Kawasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.