This inventor holds 33 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Manufacturing. Top assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited, International Business Machines Corporation. Active years: 1992-2015.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Yokohama, JP (1992 - 1997)
- Fishkill, NY (US) (1998 - 1999)
- Takatsu-ku, JP (1999)
- Kanagawa-ken, JP (2004 - 2007)
- Kanagawa, JP (1994 - 2009)
- Kawasaki, JP (2001 - 2010)
- Mie-ken, JP (2012 - 2013)
- Yokkaichi, JP (2013 - 2015)
- Tokyo, JP (2015)
Company Filing History:
30 out of 53,276 
6 out of 10,918 
2 out of 166,409 
Years Active: 1992-2015
Areas of Expertise:
Title: **Tokuhisa Ohiwa - Innovator in Plasma Processing Techniques**
Introduction
Tokuhisa Ohiwa is a prominent inventor based in Kawasaki, Japan, known for his significant contributions to the field of semiconductor device manufacturing. With a total of 33 patents to his name, Ohiwa has been at the forefront of innovations in plasma processing methods that are integral to the development of advanced technologies in the semiconductor industry.
Latest Patents
Ohiwa's latest patents include a groundbreaking plasma processing method and a deposit removal method. The plasma processing method entails performing a plasma etching on metal layers formed on a substrate, enabling the formation of intricate patterns with a stacked metal structure. This method involves creating a protective layer using an oxide or chloride of the metal on the sidewalls of the metal layers to facilitate the effective removal of unwanted deposits. Furthermore, it employs a plasma treatment that utilizes hydrogen to reduce the protective oxide or chloride after the deposit removal.
The deposit removal method is designed to eliminate deposits on patterns formed on substrates through etching processes. This method incorporates an oxygen plasma treatment while heating the substrate, followed by a cycle treatment that repeats exposure to a mixture of hydrogen fluoride gas and alcohol gas. This dual-period cycle optimizes the removal process, underscoring Ohiwa's innovative approach to improving semiconductor manufacturing techniques.
Career Highlights
Throughout his illustrious career, Tokuhisa Ohiwa has worked with prestigious companies such as Kabushiki Kaisha Toshiba and Tokyo Electron Limited. His experience at these leading firms has significantly shaped his expertise and contributions to semiconductor technology, setting a standard in the industry for effective plasma processing techniques.
Collaborations
Ohiwa has collaborated with notable professionals including Itsuko Sakai and Hisataka Hayashi. This collaborative spirit has fostered an environment of innovation, inspiring advancements that continue to shape the semiconductor field.
Conclusion
In conclusion, Tokuhisa Ohiwa's extensive patent portfolio and his commitment to innovation mark him as a pivotal figure in the realm of semiconductor device manufacturing. Through his inventive plasma processing and deposit removal techniques, Ohiwa not only enhances manufacturing efficiency but also contributes significantly to the evolution of modern technology. His work exemplifies the critical role innovators play in shaping the future of the semiconductor industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile