Kabushiki Kaisha Toshiba

Tokyo Electron Limited

Other

International Business Machines Corporation

Siemens Components, Inc.

Tokuhisa Ohiwa

Itsuko Sakai

Hisataka Hayashi

Takayuki Sakai

Katsuya Okumura

Tetsuo Matsuda

Masanobu Kibe

Hiroshi Tomita

Akihiro Kojima

Haruo Okano

Mitsuhiro Omura

Tsukasa Azuma

Junko Ohuchi

Eiichi Nishimura

Kazuya Nagaseki

David M Dobuzinsky

Hisashi Okuchi

Yasunobu Onishi

Eishi Shiobara

Shigeru Tahara

Kazuhiro Tomioka

Katsunori Yahashi

Masaki Narita

Yasuhiko Sato

Takaya Matsushita

Noriko Sakurai

Jeffrey P Gambino

Koichi Sato

Ichiro Mizushima

Nobuo Hayasaka

Shinji Himori

Keiji Horioka

Toshiyuki Sasaki

Akira Kobayashi

Hiroyuki Kawasaki

Isahiro Hasegawa

Motoyuki Sato

Shoichiro Matsuyama

Masashi Saito

Haruki Mori

Shoji Seta

Toshihiro Hayami

Yusuke Hirayama

Peter D Hoh

Fumiko Yamashita

Waldemar Walter Kocon

Virinder Grewal

Nobuyasu Nishiyama

Kazuto Ogawa

Takanori Mimura

Bruno Spuler

Sadayuki Jimbo

Takaaki Nezu

Jun-ichi Shiozawa

Hiroki Matsumaru

Katsumi Horiguchi

Rie Inazawa, Legal Representative

Hideo Ichinose

Yasuyuki Taniguchi

Noriaki Imai

Akira Takeuchi

Yoshikazu Sugiyasu

Yumi Ohno

Tadashi Shinmura

Guadalupe Wiltshire

A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

Plasma processing method and manufacturing method of semiconductor device

A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

Deposit removal method

In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.

Semiconductor device producing method

According to one embodiment, a semiconductor device includes a substrate, a lower gate layer, a stacked body, a dummy electrode layer, an insulating film, and a channel body. The lower gate layer is provided above the substrate. The stacked body includes a plurality of insulating layers and a plurality of electrode layers alternately stacked above the lower gate layer. The dummy electrode layer is provided between the lower gate layer and the stacked body, made of the same material as the electrode layer, and thicker than each of the electrode layers. The insulating film includes a charge storage film provided on a side wall of a hole formed to penetrate through the stacked body and the dummy electrode layer. The channel body is provided on an inside of the insulating film in the hole.

Semiconductor device and method for manufacturing same

According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include multiply stacking an insulating layer and a conductive layer alternately above a base member. The insulating layer includes silicon oxide. The conductive layer includes silicon. In addition, the method can form a SiOC film on a stacked body of the insulating layers and the conductive layers, pattern the SiOC film, and make a hole in the stacked body by etching the insulating layers and the conductive layers using the patterned SiOC film as a mask.

Method for manufacturing semiconductor device including a patterned SiOC film as a mask

A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

Capacitive coupling plasma processing apparatus

A method of manufacturing a semiconductor device, includes forming a sacrifice film on an etching target film, forming an etching mask on the sacrifice film, etching the etching target film using the etching mask as a mask, removing the sacrifice film to allow the etching mask to adhere to the etching target film, and removing the etching mask.

Method of manufacturing semiconductor device

In order to facilitate control of a circulating gas, in a processing apparatushaving a showerheadfor supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pumpfor evacuating the processing gas from the processing chamberand a circulating gas pipingfor returning at least a portion (circulating gas Q) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Qsupplied from a gas sourceinto the processing chamber via a plurality of primary gas outlet holes hand a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.

Processing method for conservation of processing gases

A process monitoring system has a process chamber configured to hold an object to be processed, an illumination source configured to emit a light to the object, a polarizer configured to polarize the light, a monitor window having a birefringent material and provided on the process chamber to propagate the light, direction adjusting equipment configured to adjust a relationship between a polarization plane of the light and a direction of an optic axis of the monitor window, and a monitoring information processor configured to detect the light reflected from the object.

Process monitoring system, process monitoring method, and method for manufacturing semiconductor device

An etching method etches an organic film by using an inorganic film as a mask at a high etch rate, in a satisfactory etch profile in a satisfactory in-plane uniformity without causing the inorganic film to peel off. An organic film formed on a workpiece is etched by using an inorganic film as a mask with a plasma produced by discharging an etching gas in a processing vessel (). The etching method uses a mixed gas containing NHgas and Ogas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio of 40% or above. The etching method uses NHgas as an etching gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio below 40%.

Etching method

A plasma processing method, in which a process gas is introduced into an evacuated process chamber for subjecting the target object to a plasma processing. The plasma processing method is featured in that at least a part of the process gas exhausted from the process chamber is introduced again into the process chamber. A specified value is obtained by monitoring the state of the plasma of the process gas within the process chamber, and the introducing conditions of the process gas into the process chamber are controlled to adjust a predetermined property value to a regulated value.

Plasma processing method

A method for fabricating a pattern, includes: delineating a mask pattern on at least a portion of an underlying layer; etching a portion of the mask pattern; irradiating an incident light on the mask pattern to which the etching is performed and detecting a reflected light produced by reflecting the incident light after the incident light is transmitted through the mask pattern; obtaining a reflected interference spectrum; and calculating a pattern width of the mask pattern using data of the reflected interference spectrum, the reflected interference spectrum being in a wavelength range of not less than two times a pitch of the mask pattern.

Method for fabricating a pattern and method for manufacturing a semiconductor device

This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.

High speed silicon etching method

Growing community of inventors

Kawasaki, Japan

Tokuhisa Ohiwa