The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Jul. 08, 2011
Shigeru Tahara, Nirasaki, JP;
Eiichi Nishimura, Nirasaki, JP;
Fumiko Yamashita, Nirasaki, JP;
Hiroshi Tomita, Yokohama, JP;
Tokuhisa Ohiwa, Yokkaichi, JP;
Hisashi Okuchi, Yokohama, JP;
Mitsuhiro Omura, Kawasaki, JP;
Shigeru Tahara, Nirasaki, JP;
Eiichi Nishimura, Nirasaki, JP;
Fumiko Yamashita, Nirasaki, JP;
Hiroshi Tomita, Yokohama, JP;
Tokuhisa Ohiwa, Yokkaichi, JP;
Hisashi Okuchi, Yokohama, JP;
Mitsuhiro Omura, Kawasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.