Nirasaki, Japan

Eiichi Nishimura

USPTO Granted Patents = 84 

 

Average Co-Inventor Count = 2.4

ph-index = 12

Forward Citations = 755(Granted Patents)

Forward Citations (Not Self Cited) = 753(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Hitachi, JP (1984 - 1988)
  • Katsuta, JP (1989)
  • Yamanashi-ken, JP (1998)
  • Malden, MA (US) (2005 - 2010)
  • Narasaki, JP (2011)
  • Yamanashi, JP (1992 - 2015)
  • Nirasaki, JP (2008 - 2015)
  • Kurokawa-gun, JP (2015)
  • Miyagi, JP (2013 - 2021)

Company Filing History:


Years Active: 1984-2021

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84 patents (USPTO):

Title: Eiichi Nishimura: A Prolific Inventor in Plasma Processing Technology

Introduction:

In the ever-evolving field of innovations and patents, some individuals stand out for their exceptional contributions. One such talent is Eiichi Nishimura, an inventor hailing from Nirasaki, Japan. With an impressive tally of 84 patents to his name, Nishimura has made significant strides in the realm of plasma processing apparatus and substrate processing methods. Let's delve into his latest patents, career highlights, notable collaborations, and the impact of his work.

Latest Patents:

One of Nishimura's notable recent patents is the "Method of Cleaning Plasma Processing Apparatus." This invention presents an efficient and effective approach for removing deposits formed during the etching process. By employing a plasma generated between the lower and upper electrodes, Nishimura's method utilizes ion collisions for the removal of deposits on the upper electrode. Moreover, it also addresses the generation and elimination of secondary deposits on the lower structure. The cyclical repetition of these steps enhances the cleaning process, paving the way for improved plasma processing apparatus.

Additionally, Nishimura has patented a "Substrate Processing Apparatus and Substrate Processing Method." This invention addresses the challenges associated with processing reaction products during the etching of an etching target film in a target object. By incorporating a partition plate within the processing chamber, this apparatus separates the space into a plasma generating space and a substrate processing space. The partition plate effectively restricts the penetration of ions and vacuum ultraviolet rays. Nishimura's work contributes to the development of more controlled and efficient substrate processing methods.

Career Highlights:

Throughout his career, Nishimura has held key positions at renowned companies, including Tokyo Electron Limited and Hitachi Co., Ltd. At Tokyo Electron Limited, a leading semiconductor manufacturing equipment supplier, he had ample opportunities to explore and refine his innovations in plasma processing technology. Nishimura's collaboration with industry leaders firmly established his expertise in the field and propelled him to new heights.

Collaborations:

Nishimura's work has not been solitary; he has collaborated with esteemed colleagues to contribute to technological advancements. Notably, Masato Kushibiki and Fumiko Yamashita have played instrumental roles in his research journey. Their collective efforts have brought forth innovative solutions and pushed the boundaries of plasma processing apparatus and substrate processing methods.

Conclusion:

Eiichi Nishimura's contributions to the field of plasma processing apparatus and substrate processing methods have been highly significant. With an impressive portfolio of 84 patents, he has proven himself as a talented inventor. Nishimura's latest patents, including the method of cleaning plasma processing apparatus and the substrate processing apparatus and method, showcase his commitment to advancing technology in semiconductor manufacturing and related industries. Collaborations with industry-leading companies and accomplished colleagues have further amplified the impact of his work. As an influential figure in the world of innovations and patents, Eiichi Nishimura continues to inspire and shape the future of plasma processing technology.

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