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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9691643 B1

PDFFull Text
Date of Patent:
Jun. 27, 2017

Filed:

Sep. 29, 2014

Etching apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Eiichi Nishimura, Miyagi, JP;

Tadashi Kotsugi, Miyagi, JP;

Fumiko Yamashita, Miyagi, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Gordon R Baldwin

Assistant Examiner:

Aiden Lee

Int. Cl.
CPC ...
H01L 21/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/0002 (2013.01); H01J 37/32009 (2013.01); H01J 37/32091 (2013.01); H01J 37/32155 (2013.01); H01J 37/32706 (2013.01); H01L 21/0271 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 21/31138 (2013.01); H01J 2237/3343 (2013.01); H01J 2237/3348 (2013.01);
Abstract

An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

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