The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2019

Filed:

Oct. 08, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Eiichi Nishimura, Miyagi, JP;

Mitsunori Ohata, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 21/67 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 21/67069 (2013.01); H01L 27/224 (2013.01); H01L 43/08 (2013.01);
Abstract

A method according to an exemplary embodiment includes: (a) etching an upper magnetic layer by plasma generated within a processing container, the etching of the upper magnetic layer being terminated on a surface of an insulating layer; (b) removing a deposit formed on a surface of the mask and the upper magnetic layer by etching the upper magnetic layer, by the plasma generated within the processing container; and (c) etching the insulating layer by the plasma generated within the processing container. In the step of removing the deposit, the support structure that holds a processing target is inclined and rotated, and a pulse-modulated DC voltage as a bias voltage for ion attraction is applied to the support structure.


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