The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2016

Filed:

Oct. 29, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Eiichi Nishimura, Miyagi, JP;

Masato Kushibiki, Miyagi, JP;

Nao Koizumi, Miyagi, JP;

Takashi Sone, Miyagi, JP;

Fumiko Yamashita, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01J 37/32091 (2013.01);
Abstract

A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CFgas into the processing chamber.


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