Tokyo Electron Limited

Hitachi, Ltd.

Tokyo Electron Yamanashi Limited

Kabushiki Kaisha Toshiba

Tohoku University

Meiko Co., Ltd.

Emd Corporation

Eiichi Nishimura

Masato Kushibiki

Fumiko Yamashita

Takashi Sone

Shigeru Tahara

Akitaka Shimizu

Vaidyanathan Balasubramaniam

Tsuyoshi Moriya

Koichi Yatsuda

Kouichiro Inazawa

Kenya Iwasaki

Hiroshi Tomita

Jun Yamawaku

Masayuki Kojima

Hisashi Okuchi

Kazuhiko Sugiyama

Mitsuhiro Omura

Tokuhisa Ohiwa

Mikhail Rodionovich Baklanov

Shigeki Tozawa

Jean-Francois De Marneffe

Tetsuo Endoh

Takehiko Orii

Jun Sato

Mitsunori Ohata

Ryuichi Asako

Shinya Morikita

Shunsuke Uchida

Koichiro Inazawa

Akinori Ebe

Kimihiro Higuchi

Yusuke Muraki

Takanori Matsumoto

Hiraku Ishikawa

Hidefumi Matsui

Takamichi Kikuchi

Ryo Nonaka

Masaaki Miyagawa

Yukio Naito

Yoshiki Igarashi

Tatsuo Hayashi

Yuichi Setsuhara

Tadashi Kotsugi

Keiichi Shimoda

Masaaki Hagihara

Mitsuru Hashimoto

Hiroki Kishi

Shunichi Iimuro

Liping Zhang

Yasunori Hatamura

Masashi Arasawa

Yoshikazu Ito

Rie Inazawa, Legal Representative

Daisuke Urayama

Masaaki Hagiwara

Chie Kato

Nao Koizumi

Hiroyuki Takahashi

Tsuyoshi Shibata

Yuki Chiba

Kazumichi Suzuki

Yuko Ono

Kenji Adachi

Tadashi Onishi

Akihito Toda

Kazushi Tomita

Tsuneyuki Hashimoto

Masao Kitamura

Yusuke Shimizu

Kunio Miyauchi

Kumiko Yamazaki

Hiroki Kumahora

Eishi Ibe

Koichi Saito

Shinichi Kawaguchi

Ralph Kim

Kei Nakayama

Philip Sansone

Satoko Niitsuma

Yukio Naitou

Masafumi Shimizu

Kouichi Oshima

Koyumi Sasa

Kazuhsi Tomita

Shimao Yoneyama

Yoshiaki Sasaski

Wataru Kume

There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

Method of cleaning plasma processing apparatus

An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.

Substrate processing apparatus and substrate processing method

There is provided a method of processing a target object to be processed including a porous film and a mask. The method include supplying a first gas into a processing chamber of a plasma processing apparatus in which the target object including the porous film is accommodated, and generating a plasma of a second gas in the processing chamber to remove the mask. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the target object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas supplied into the processing chamber is greater than or equal to 20% of the saturated vapor pressure.

Method of processing target object to be processed

A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.

Method of etching porous film

A method according to an exemplary embodiment includes: (a) etching an upper magnetic layer by plasma generated within a processing container, the etching of the upper magnetic layer being terminated on a surface of an insulating layer; (b) removing a deposit formed on a surface of the mask and the upper magnetic layer by etching the upper magnetic layer, by the plasma generated within the processing container; and (c) etching the insulating layer by the plasma generated within the processing container. In the step of removing the deposit, the support structure that holds a processing target is inclined and rotated, and a pulse-modulated DC voltage as a bias voltage for ion attraction is applied to the support structure.

Method for etching multilayer film

A method of an embodiment includes: mounting a workpiece, which includes the magnetic layer, on an electrostatic chuck provided in a processing container of a plasma processing apparatus; and etching the magnetic layer to generate plasma of a processing gas including isopropyl alcohol and carbon dioxide in the processing container. In an embodiment, a pressure of a space in the processing container is set to be 1.333 Pa or less, a temperature of the electrostatic chuck is set to be &#x2212;15&#xb0; C. or lower, and a partial pressure of isopropyl alcohol is set to be equal to or lower than a saturation vapor pressure of the isopropyl alcohol.

Method for etching magnetic layer including isopropyl alcohol and carbon dioxide

An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PFgas.

Etching method and substrate processing apparatus

Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CHgas, oxygen gas, and a noble gas. In an exemplary embodiment, the metal mask may include a layer made of TiN.

Method for etching copper layer

In a method according to one embodiment, a first processing gas is supplied into a processing container of a plasma processing apparatus, and a plasma of the first processing gas is generated to etch an upper magnetic layer by the plasma of the first processing gas. Subsequently, a deposit, which is generated due to the etching of the upper magnetic layer, is removed. The removal of the deposit includes allowing a reduction reaction to occur in the deposit by a plasma of a second processing gas that contains Hgas, and removing a product, which is generated by the reduction reaction, by using a third processing gas that contains hexafluoroacetylacetone.

Method for processing object to be processed

An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

Etching apparatus

A plasma processing method of etching a multilayered material having a structure where a first magnetic layerand a second magnetic layerare stacked with an insulating layertherebetween is performed by a plasma processing apparatusincluding a processing chamberwhere a processing space S is formed; and a gas supply unitof supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl, and the second processing gas contains H.

Plasma processing method and plasma processing apparatus

Provided is a method for etching an etching target layer of a workpiece. The workpiece has a mask on the etching target layer. The etching target layer and the mask are formed from respective materials for which etching efficiency by a plasma of a rare gas having an atomic number greater than an atomic number of argon is higher than etching efficiency for the materials by a plasma of argon gas. The mask is formed from a material having a melting point higher than that of the etching target layer. The method includes (a) exposing the workpiece to a plasma of a first process gas containing a first rare gas having an atomic number greater than the atomic number of argon, and (b) exposing the workpiece to a plasma of a second process gas containing a second rare gas having an atomic number less than the atomic number of argon.

Method for etching layer to be etched

A gas for an etching process and a treatment process of a metal stacked film in which an insulating layer is interposed between two layers of magnetic materials can be optimized. An etching method of etching a multilayered film including a metal stacked film in which an insulating layer is interposed between a first magnetic layer and a second magnetic layer includes etching the metal stacked film with plasma generated by supplying a gas containing at least C, O, and H into a processing chamber; and treating the metal stacked film with plasma generated by supplying a gas containing at least a CFgas into the processing chamber.

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Nirasaki, Japan

Eiichi Nishimura