The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Jul. 10, 2015
Applicants:

Tokyo Electron Limited, Tokyo, JP;

Takeshi Sakuma, Tokyo, JP;

Inventors:

Jun Sato, Miyagi, JP;

Eiichi Nishimura, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 27/105 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 27/105 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

In a method according to one embodiment, a first processing gas is supplied into a processing container of a plasma processing apparatus, and a plasma of the first processing gas is generated to etch an upper magnetic layer by the plasma of the first processing gas. Subsequently, a deposit, which is generated due to the etching of the upper magnetic layer, is removed. The removal of the deposit includes allowing a reduction reaction to occur in the deposit by a plasma of a second processing gas that contains Hgas, and removing a product, which is generated by the reduction reaction, by using a third processing gas that contains hexafluoroacetylacetone.


Find Patent Forward Citations

Loading…