The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Oct. 04, 2004
Kazuto Ogawa, Yamanashi-ken, JP;
Rie Inazawa, Legal Representative, Yamanashi-ken, JP;
Hisataka Hayashi, Kanagawa-ken, JP;
Tokuhisa Ohiwa, Kanagawa-ken, JP;
Kazuto Ogawa, Yamanashi-ken, JP;
Rie Inazawa, legal representative, Yamanashi-ken, JP;
Hisataka Hayashi, Kanagawa-ken, JP;
Tokuhisa Ohiwa, Kanagawa-ken, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An etching method etches an organic film by using an inorganic film as a mask at a high etch rate, in a satisfactory etch profile in a satisfactory in-plane uniformity without causing the inorganic film to peel off. An organic film formed on a workpiece is etched by using an inorganic film as a mask with a plasma produced by discharging an etching gas in a processing vessel (). The etching method uses a mixed gas containing NHgas and Ogas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio of 40% or above. The etching method uses NHgas as an etching gas for etching the organic film when the organic film is to be etched in a pattern having an opening ratio below 40%.