The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2013

Filed:

Jan. 25, 2011
Applicants:

Mitsuhiro Omura, Kawasaki, JP;

Yumi Ohno, Yokkaichi, JP;

Takaya Matsushita, Yokkaichi, JP;

Tokuhisa Ohiwa, Yokkaichi, JP;

Inventors:

Mitsuhiro Omura, Kawasaki, JP;

Yumi Ohno, Yokkaichi, JP;

Takaya Matsushita, Yokkaichi, JP;

Tokuhisa Ohiwa, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor device producing method according to one embodiment, an insulating film containing silicon is formed on a semiconductor substrate, a resist is deposited on the insulating film, the resist is patterned into a predetermined pattern, and the insulating film is processed by a dry etching treatment in which gas containing C, F, Br, H, and O is used with the resist having the predetermined pattern as a mask. A deposited film in which C and Br are coupled is produced on the resist.


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