The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2015

Filed:

May. 10, 2012
Applicants:

Shigeru Tahara, Miyagi, JP;

Eiichi Nishimura, Miyagi, JP;

Hiroshi Tomita, Tokyo, JP;

Tokuhisa Ohiwa, Tokyo, JP;

Hisashi Okuchi, Tokyo, JP;

Mitsuhiro Omura, Tokyo, JP;

Inventors:

Shigeru Tahara, Miyagi, JP;

Eiichi Nishimura, Miyagi, JP;

Hiroshi Tomita, Tokyo, JP;

Tokuhisa Ohiwa, Tokyo, JP;

Hisashi Okuchi, Tokyo, JP;

Mitsuhiro Omura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 3/14 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
B05D 3/145 (2013.01); H01L 21/02057 (2013.01); H01L 21/02063 (2013.01); H01L 21/31116 (2013.01);
Abstract

A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.


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