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For the Inventor, By the Inventor

Anyang, South Korea

Hyun-Kook Park

This inventor holds 30 USPTO granted patents and 2 published patent applications, primarily in Resistive Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2015-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyun-Kook Park. Retrieved from https://idiyas.com/inventor/hyun-kook-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 6

Forward Citations = 96(Granted Patents)


Location History:

  • Seoul, KR (2015)
  • Anyang-si, KP (2017)
  • Anyang-Si, KR (2015 - 2020)

Company Filing History:

goldMedal30 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2015-2020

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Areas of Expertise:
Resistive Memory
Temperature Compensation
Cell Resistance
Data Writing
Memory Systems
Cross-Point Memory
Nonvolatile Memory
Sensing Circuits
Leakage Current
Bidirectional Driving
Stack Layers
Operating Methods
30 patents (USPTO):Explore Patents
1. 10839903 - Resistive memory devices (2020-11-17),
2. 9728252 - Resistive memory device with temperature compensation, resistive memory system, and operating method thereof (2017-08-08),
3. 9685227 - Control of memory device reading based on cell resistance (2017-06-20),
4. 9659645 - Resistive memory device and method of writing data (2017-05-23),
5. 9646687 - Resistive memory device and operating method (2017-05-09),
6. 9646685 - Resistive memory device, resistive memory, and operating method of the resistive memory device (2017-05-09),
7. 9633726 - Resistive memory device, resistive memory system, and method of operating resistive memory device (2017-04-25),
8. 9613697 - Resistive memory device (2017-04-04),
9. 9589632 - Resistive memory device including column decoder and method of performing a bidirectional driving operation and providing appropriate biasing with respect to bit lines (2017-03-07),
10. 9570200 - Resistive memory device having memory cell arrays with multiple stack layers and bad-region managing circuit and method for managing short failure (2017-02-14),
11. 9570170 - Resistive memory device and method of operating the same (2017-02-14),
12. 9558822 - Resistive memory device and method of operating the resistive memory device (2017-01-31),
13. 9558821 - Resistive memory device and method of operating the same (2017-01-31),
14. 9552878 - Resistive memory device and operating method (2017-01-24),
15. 9536605 - Resistive memory device and operating method (2017-01-03),

Title: Hyun-Kook Park: Pioneering Inventor from Anyang-si, KR

Introduction: Hyun-Kook Park is a distinguished inventor hailing from Anyang-si, South Korea. With a passion for innovation and a keen eye for technological advancements, Park has made significant contributions to various fields through his inventive spirit.

Latest Patents: Park's latest patents focus on renewable energy solutions, particularly in the development of solar panel efficiency and energy storage technologies. His innovative approach has garnered attention in the clean energy sector.

Career Highlights: Throughout his career, Park has been recognized for his groundbreaking work in the field of sustainable technologies. His inventions have not only revolutionized the way we harness renewable energy but have also paved the way for a more environmentally conscious future.

Collaborations: Park has collaborated with leading research institutions and universities to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of innovation and driving progress in the renewable energy industry.

Conclusion: Hyun-Kook Park's dedication to innovation and sustainability has solidified his position as a trailblazing inventor in the realm of clean energy technologies. His contributions continue to inspire future generations of inventors to think boldly and create solutions that make a lasting impact on society.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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