The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Mar. 12, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hyun-Kook Park, Anyang-si, KR;

Dae-Seok Byeon, Seongnam-si, KR;

Yeong-Taek Lee, Seoul, KR;

Hyo-Jin Kwon, Seoul, KR;

Yong-Kyu Lee, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); G11C 11/5664 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0064 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0076 (2013.01); G11C 2213/71 (2013.01);
Abstract

Provided are a resistive memory device and a method of the resistive memory device. The method of operating the resistive memory device includes performing a pre-read operation on memory cells in response to a write command; performing an erase operation on one or more first memory cells on which a reset write operation is to be performed, determined based on a result of comparing pre-read data from the pre-read operation with write data; and performing set-direction programming on at least some memory cells from among the erased one or more first memory cells and on one or more second memory cells on which a set write operation is to be performed.


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