The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Apr. 27, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Hyun-Kook Park, Anyang-si, KR;
Yeong-Taek Lee, Seoul, KR;
Dae-Seok Byeon, Seongnam-si, KR;
Yong-Kyu Lee, Hwaseong-si, KR;
Hyo-Jin Kwon, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 29/02 (2006.01); G11C 29/04 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0021 (2013.01); G11C 13/0002 (2013.01); G11C 13/0033 (2013.01); G11C 13/0035 (2013.01); G11C 13/0038 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 2029/0407 (2013.01); G11C 2029/5006 (2013.01); G11C 2213/71 (2013.01);
Abstract
An operating method for a resistive memory device includes; applying a bias control voltage to a memory cell array of the resistive memory device, measuring leakage current that occurs in the memory cell array in response to the applied bias control voltage to generate a measuring result, generating a control signal based on the measuring result, and adjusting a level of the bias control voltage in response to the control signal.