The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Jul. 10, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yong-kyu Lee, Hwaseong-si, KR;

Yeong-taek Lee, Seoul, KR;

Dae-seok Byeon, Seongnam-si, KR;

In-gyu Baek, Seoul, KR;

Man Chang, Seoul, KR;

Lijie Zhang, Suwon-si, KR;

Hyun-kook Park, Anyang-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/04 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/5607 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0064 (2013.01); G11C 7/04 (2013.01); G11C 11/1673 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0054 (2013.01);
Abstract

A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.


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