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For the Inventor, By the Inventor

Seongnam, South Korea

Man Chang

This inventor holds 16 USPTO granted patents and 6 published patent applications and 3 EPO patents, primarily in Resistive Memory Technology. Top assignees: Samsung Electronics Co., Ltd., Pohang University of Science and Technology Foundation. Active years: 2013-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Man Chang. Retrieved from https://idiyas.com/inventor/man-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 93.8

 

Average Co-Inventor Count = 7.2

ph-index = 4

Forward Citations = 43(Granted Patents)


Location History:

  • Seongnam-si, KR (2013 - 2016)
  • Seoul, KR (2015 - 2017)
  • Hwaseong-si, KR (2017)

Company Filing History:

goldMedal16 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 1,113 
 
Pohang University of Science and Technology Foundation
 patents
where one patent can have more than one assignee

Years Active: 2013-2017

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Areas of Expertise:
Resistive Memory
Memory Devices
Variable Resistance
Nonvolatile Memory
Semiconductor Devices
Bipolar Memory Cells
Temperature Compensation
Pulse Power Specifications
Resistance Switching
Memory Elements
Manufacturing Methods
16 patents (USPTO):Explore Patents
1. 9728252 - Resistive memory device with temperature compensation, resistive memory system, and operating method thereof (2017-08-08),
2. 9633727 - Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specifications (2017-04-25),
3. 9514813 - Resistive memory device, resistive memory system, and operating method thereof (2016-12-06),
4. 9484087 - Multi-bit memory elements, memory devices including the same, and methods of manufacturing the same (2016-11-01),
5. 9257485 - Memory device and apparatus including the same (2016-02-09),
6. 9153778 - Resistive switching devices and memory devices including the same (2015-10-06),
7. 9105837 - Bipolar memory cells and memory devices including the same (2015-08-11),
8. 9099639 - Resistance switching material element and device employing the same (2015-08-04),
9. 9001551 - Semiconductor devices including variable resistance elements and methods of operating semiconductor devices (2015-04-07),
10. 8947905 - Nonvolatile memory devices and methods of driving the same (2015-02-03),
11. 8861253 - Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device (2014-10-14),
12. 8773888 - Method of operating semiconductor device including variable resistance device (2014-07-08),
13. 8772750 - Non-volatile memory elements and memory devices including the same (2014-07-08),
14. 8611131 - Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device (2013-12-17),
15. 8537591 - Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices (2013-09-17),

Title: Man Chang: Innovator in Resistive Memory Technology

Introduction

Man Chang is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of memory devices, particularly in resistive memory technology. With a total of 16 patents to his name, Chang's work has advanced the understanding and functionality of memory systems.

Latest Patents

Among his latest patents, Chang has developed a resistive memory device with temperature compensation. This innovative method for operating a memory device involves sensing temperature changes and adjusting the reference current for read operations accordingly. The adjustments ensure accurate data retrieval from memory cells, enhancing the device's reliability. Another notable patent focuses on controlling resistive memory devices according to selected pulse power specifications. This method includes generating specific pulse power for memory cells, optimizing write operations and improving overall performance.

Career Highlights

Throughout his career, Man Chang has worked with leading organizations, including Samsung Electronics and the Postech Academy-Industry Foundation. His experience in these esteemed companies has allowed him to refine his expertise in memory technology and contribute to groundbreaking advancements in the field.

Collaborations

Chang has collaborated with notable colleagues such as Young-Bae Kim and Chang-jung Kim. These partnerships have fostered a creative environment that has led to innovative solutions in resistive memory technology.

Conclusion

Man Chang's contributions to resistive memory technology have positioned him as a key figure in the field. His innovative patents and collaborations continue to influence advancements in memory devices, showcasing his dedication to technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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