The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
May. 25, 2011
Chang-bum Lee, Seoul, KR;
Chang-jung Kim, Yongin-si, KR;
Young-bae Kim, Seoul, KR;
Myoung-jae Lee, Hwaseong-si, KR;
Ji-hyun Hur, Hwaseong-si, KR;
Dong-soo Lee, Gunpo-si, KR;
Man Chang, Seongnam-si, KR;
Seung-ryul Lee, Seoul, KR;
Chang-bum Lee, Seoul, KR;
Chang-jung Kim, Yongin-si, KR;
Young-bae Kim, Seoul, KR;
Myoung-jae Lee, Hwaseong-si, KR;
Ji-hyun Hur, Hwaseong-si, KR;
Dong-soo Lee, Gunpo-si, KR;
Man Chang, Seongnam-si, KR;
Seung-ryul Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A non-volatile memory element includes: a memory layer disposed between a first electrode and a second electrode; and a buffer layer disposed between the memory layer and the first electrode. The memory layer includes a first material layer and a second material layer. The first material layer and the second material layer are configured to exchange ionic species to change a resistance state of the memory layer.