Hwaseong-si, South Korea

Ji-hyun Hur

USPTO Granted Patents = 14 

Average Co-Inventor Count = 6.3

ph-index = 4

Forward Citations = 33(Granted Patents)


Location History:

  • Seongnam, KR (2006)
  • Yongin-si, KR (2011 - 2013)
  • Hwaseong-si, KR (2013 - 2018)

Company Filing History:


Years Active: 2006-2018

Loading Chart...
14 patents (USPTO):Explore Patents

Title: Ji-hyun Hur: Innovator in Semiconductor Technology

Introduction

Ji-hyun Hur is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of Ji-hyun Hur's latest patents involves a semiconductor device and a method of fabricating the same. This patent discloses a semiconductor device that includes an oxygen gettering layer positioned between a group III-V compound semiconductor layer and a dielectric layer. The device may consist of a compound semiconductor layer, a dielectric layer placed on the compound semiconductor layer, and an oxygen gettering layer interposed between them. The oxygen gettering layer is made from a material that has a higher oxygen affinity than that of the compound semiconductor layer, which is crucial for improving device performance.

Career Highlights

Ji-hyun Hur is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Ji-hyun has collaborated with notable colleagues, including Dong-Soo Lee and Myoung-jae Lee, who have contributed to his research and development efforts in the semiconductor field.

Conclusion

Ji-hyun Hur's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…