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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9306008 B1

PDFFull Text
Date of Patent:
Apr. 05, 2016

Filed:

Mar. 13, 2014

Semiconductor device and method of fabricating the same

Applicants:

Dong-soo Lee, Gunpo-si, KR;

Myoung-jae Lee, Hwaseong-si, KR;

Seong-ho Cho, Yongin-si, KR;

Mohammad Rakib Uddin, Hwaseong-si, KR;

David Seo, Yongin-si, KR;

Moon-seung Yang, Hwaseong-si, KR;

Sang-moon Lee, Yongin-si, KR;

Sung-hun Lee, Yongin-si, KR;

Ji-hyun Hur, Hwaseong-si, KR;

Eui-chul Hwang, Seongnam-si, KR;

Inventors:

Dong-soo Lee, Gunpo-si, KR;

Myoung-Jae Lee, Hwaseong-si, KR;

Seong-ho Cho, Yongin-si, KR;

Mohammad Rakib Uddin, Hwaseong-si, KR;

David Seo, Yongin-si, KR;

Moon-seung Yang, Hwaseong-si, KR;

Sang-moon Lee, Yongin-si, KR;

Sung-hun Lee, Yongin-si, KR;

Ji-hyun Hur, Hwaseong-si, KR;

Eui-chul Hwang, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

George Fourson, III

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/20 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/322 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/20 (2013.01); H01L 21/28264 (2013.01); H01L 21/3228 (2013.01); H01L 29/513 (2013.01); H01L 29/66522 (2013.01); H01L 29/7851 (2013.01); H01L 29/2003 (2013.01); H01L 29/24 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01);
Abstract

The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

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