Hwaseong-si, South Korea

Moon-seung Yang

USPTO Granted Patents = 11 

Average Co-Inventor Count = 5.4

ph-index = 3

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2011-2018

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11 patents (USPTO):Explore Patents

Title: Moon-seung Yang: Innovator in Semiconductor Technology

Introduction

Moon-seung Yang is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents, Yang has developed a semiconductor device and a method of fabricating the same. This invention includes an oxygen gettering layer positioned between a group III-V compound semiconductor layer and a dielectric layer. The oxygen gettering layer is designed to include a material with a higher oxygen affinity than that of the compound semiconductor layer. Another notable patent involves a substrate structure and a complementary metal oxide semiconductor (CMOS) device, which aims to reduce the thickness of the buffer layer while improving the performance characteristics of the semiconductor device.

Career Highlights

Throughout his career, Moon-seung Yang has worked with leading organizations in the technology sector. He has been associated with Samsung Electronics Co., Ltd. and the Korea Advanced Institute of Science and Technology. His experience in these prestigious companies has allowed him to refine his expertise in semiconductor innovations.

Collaborations

Yang has collaborated with notable professionals in his field, including Seong-ho Cho and Mohammad Rakib Uddin. These collaborations have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Moon-seung Yang is a distinguished inventor whose work in semiconductor technology has led to numerous patents and advancements in the field. His contributions continue to influence the development of efficient semiconductor devices.

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