The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Oct. 09, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Moon-seung Yang, Hwaseong-si, KR;

Mohammad Rakib Uddin, Hawseong-si, KR;

Myoung-jae Lee, Hwaseong-si, KR;

Sang-moon Lee, Suwon-si, KR;

Sung-hun Lee, Yongin-si, KR;

Seong-ho Cho, Gwacheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02439 (2013.01); H01L 21/02452 (2013.01); H01L 21/02505 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/02645 (2013.01); H01L 27/092 (2013.01);
Abstract

A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.


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