The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2014

Filed:

Feb. 10, 2012
Applicants:

Joo-sung Kim, Seongnam-si, KR;

Taek Kim, Seongnam-si, KR;

Moon-seung Yang, Hwaseong-si, KR;

Inventors:

Joo-sung Kim, Seongnam-si, KR;

Taek Kim, Seongnam-si, KR;

Moon-seung Yang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/24 (2010.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); B82Y 20/00 (2011.01); H01L 33/32 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); B82Y 20/00 (2013.01); H01L 33/32 (2013.01); H01L 33/08 (2013.01);
Abstract

A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer.


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