The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
May. 24, 2011
Dong-soo Lee, Gunpo-si, KR;
Man Chang, Seongnam-si, KR;
Young-bae Kim, Seoul, KR;
Myoung-jae Lee, Hwaseong-si, KR;
Chang-bum Lee, Seoul, KR;
Seung-ryul Lee, Seoul, KR;
Chang-jung Kim, Yongin-si, KR;
Ji-hyun Hur, Hwaseong-si, KR;
Dong-soo Lee, Gunpo-si, KR;
Man Chang, Seongnam-si, KR;
Young-bae Kim, Seoul, KR;
Myoung-jae Lee, Hwaseong-si, KR;
Chang-bum Lee, Seoul, KR;
Seung-ryul Lee, Seoul, KR;
Chang-jung Kim, Yongin-si, KR;
Ji-hyun Hur, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level.