The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Feb. 15, 2011
Applicants:

Chang-jung Kim, Yongin-si, KR;

Young-bae Kim, Seoul, KR;

Ji-hyun Hur, Hwaseong-si, KR;

Dong-soo Lee, Gunpo-si, KR;

Man Chang, Seongnam-si, KR;

Chang-bum Lee, Seoul, KR;

Seung-ryul Lee, Seoul, KR;

Inventors:

Chang-jung Kim, Yongin-si, KR;

Young-bae Kim, Seoul, KR;

Ji-hyun Hur, Hwaseong-si, KR;

Dong-soo Lee, Gunpo-si, KR;

Man Chang, Seongnam-si, KR;

Chang-bum Lee, Seoul, KR;

Seung-ryul Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/085 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 27/2481 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); G11C 2013/0073 (2013.01); G11C 2213/56 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01);
Abstract

Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures.


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