The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Nov. 18, 2010
Hyuk-soon Choi, Seongnam-si, KR;
Ji-hyun Hur, Yongin-si, KR;
Yoon-ho Kang, Yongin-si, KR;
Hyo-sug Lee, Suwon-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon OH, Seongnam-si, KR;
Hyuk-soon Choi, Seongnam-si, KR;
Ji-hyun Hur, Yongin-si, KR;
Yoon-ho Kang, Yongin-si, KR;
Hyo-sug Lee, Suwon-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon Oh, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.