The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Apr. 22, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Kyung-min Kim, Goyang-si, KR;

Young-bae Kim, Seoul, KR;

Chang-jung Kim, Yongin-si, KR;

Seung-ryul Lee, Seoul, KR;

Man Chang, Seoul, KR;

Sung-ho Kim, Yongin-si, KR;

Eun-ju Cho, Yecheon-gun, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); G11C 2213/32 (2013.01); G11C 2213/51 (2013.01); G11C 2213/55 (2013.01); H01L 27/2463 (2013.01);
Abstract

A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.


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