The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Jun. 14, 2012
Man Chang, Seongnam-si, KR;
Young-bae Kim, Seoul, KR;
Dong-soo Lee, Gunpo-si, KR;
Chang-bum Lee, Seoul, KR;
Seung-ryul Lee, Seoul, KR;
Chang-jung Kim, Yongin-si, KR;
Myoung-jae Lee, Hwaseong-si, KR;
Kyung-min Kim, Goyang-si, KR;
Man Chang, Seongnam-si, KR;
Young-bae Kim, Seoul, KR;
Dong-soo Lee, Gunpo-si, KR;
Chang-bum Lee, Seoul, KR;
Seung-ryul Lee, Seoul, KR;
Chang-jung Kim, Yongin-si, KR;
Myoung-jae Lee, Hwaseong-si, KR;
Kyung-min Kim, Goyang-si, KR;
Samsung Electronics Co., Ltd, Gyeonggi-Do, KR;
Abstract
A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell.