The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Feb. 27, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Young-bae Kim, Seoul, KR;

Kyung-min Kim, Goyang-si, KR;

Sung-ho Kim, Yongin-si, KR;

Seung-ryul Lee, Seoul, KR;

Man Chang, Seoul, KR;

Eun-ju Cho, Gyeongbuk, KR;

Sae-jin Kim, Hwaseong-si, KR;

Chang-jung Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 27/249 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 45/04 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01);
Abstract

A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.


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