The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Aug. 19, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Man Chang, Hwaseong-si, KR;
In-gyu Baek, Seoul, KR;
Sang-heon Lee, Pohang-si, KR;
Hyun-sang Hwang, Pohang-si, KR;
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
POSTECH ACADEMY-INDUSTRY FOUNDATION, Gyeongsangbuk-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0064 (2013.01); G11C 2013/0092 (2013.01);
Abstract
A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.