The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Jul. 23, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Hyun-Kook Park, Anyang-Si, KR;

Yeong-Taek Lee, Seoul, KR;

Dae-Seok Byeon, Seongnam-Si, KR;

Bo-Geun Kim, Gyeonggi-Do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/5607 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0061 (2013.01); G11C 11/1673 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/71 (2013.01); G11C 2213/77 (2013.01);
Abstract

Provided are a resistive memory device including a plurality of memory cells, and a method of operating the resistive memory device. The resistive memory device includes a sensing circuit connected to a first signal line, to which a memory cell is connected, the sensing circuit sensing data stored in the memory cell based on a first reference current; and a reference time generator for generating a reference time signal that determines a time point when a result of the sensing is to be output, based on the first reference current.


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