The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Mar. 18, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Yong-Kyu Lee, Hwaseong-si, KR;

Yeong-Taek Lee, Seoul, KR;

Dae-Seok Byeon, Seongnam-si, KR;

Hyun-Kook Park, Anyang-si, KR;

Hyo-Jin Kwon, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 7/06 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 7/06 (2013.01); G11C 11/1673 (2013.01); G11C 11/56 (2013.01); G11C 11/5607 (2013.01); G11C 11/5614 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0002 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/71 (2013.01);
Abstract

A method of reading a memory device that includes a memory cell that stores data of at least two bits includes determining whether a cell resistance level is no greater than a threshold resistance level. If the cell resistance level is smaller than or equal to the threshold resistance level, then the data is read based on a first factor that is inversely proportional to the cell resistance level. If the cell resistance level is greater than the threshold resistance level, then the data is read based on a second factor that is proportional to the cell resistance level.


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