The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2017

Filed:

Feb. 11, 2015
Applicants:

Hyo-jin Kwon, Seoul, KR;

Yeong-taek Lee, Seoul, KR;

Dae-seok Byeon, Seongnam-si, KR;

Yong-kyu Lee, Hwaseong-si, KR;

Hyun-kook Park, Anyang-si, KR;

Inventors:

Hyo-Jin Kwon, Seoul, KR;

Yeong-Taek Lee, Seoul, KR;

Dae-Seok Byeon, Seongnam-si, KR;

Yong-Kyu Lee, Hwaseong-si, KR;

Hyun-Kook Park, Anyang-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/07 (2006.01); G11C 13/00 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0033 (2013.01); G11C 13/0035 (2013.01); G11C 13/0069 (2013.01); G11C 29/52 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/77 (2013.01);
Abstract

Provided are a resistive memory device and an operating method for the resistive memory device. The operating method includes detecting a write cycle, determining whether or not to perform a recovery operation by comparing the detected write cycle with a first reference value, and upon determining to perform the recovery operation, performing the recovery operation on target memory cells of the memory cell array.


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