The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
May. 19, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1677 (2013.01); G11C 11/1693 (2013.01); G11C 11/56 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0061 (2013.01); G11C 13/0064 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0088 (2013.01);
Abstract
A method of operating a resistive memory device having a plurality of word lines and a plurality of bit lines includes selecting one or more first memory cells connected to a first bit line, selecting one or more second memory cells connected to a second bit line, and simultaneously performing a reset write operation on the first and second memory cells using a first write driver.