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For the Inventor, By the Inventor

Tainan, Taiwan

Hui-Cheng Chang

This inventor holds 27 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hui-Cheng Chang. Retrieved from https://idiyas.com/inventor/hui-cheng-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27 

% Patents Active = 85.2

Average Co-Inventor Count = 5.1

ph-index = 3

Forward Citations = 19(Granted Patents)


Location History:

  • Hsin-Chu, TW (2019 - 2021)
  • Tainan, TW (2015 - 2023)

Company Filing History:

goldMedal27 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2025

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Areas of Expertise:
Semiconductor Device
MOSFET Structure
Fin Field Effect Transistors
Capping Layer
Channel Formation
Vertical Structure
Delta Doping Layer
Contact Resistivity
27 patents (USPTO):Explore Patents
1. 12471361 - Semiconductor device (2025-11-11),
2. 12094757 - Method for manufacturing semiconductor device with semiconductor capping layer (2024-09-17),
3. 11688625 - Method for manufacturing semiconductor device (2023-06-27),
4. 11257819 - Semiconductor device (2022-02-22),
5. 11127837 - Method of forming MOSFET structure (2021-09-21),
6. 11056486 - Semiconductor device with multiple threshold voltage and method of fabricating the same (2021-07-06),
7. 10991695 - Method for manufacturing semiconductor device (2021-04-27),
8. 10879061 - Semiconductor device and method for forming the same (2020-12-29),
9. 10756199 - Fin field effect transistors having conformal oxide layers and methods of forming same (2020-08-25),
10. 10622356 - Semiconductor device and method of manufacturing the same (2020-04-14),
11. 10461170 - Method of forming MOSFET structure (2019-10-29),
12. 10276725 - Gate structure (2019-04-30),
13. 10276562 - Semiconductor device with multiple threshold voltage and method of fabricating the same (2019-04-30),
14. 10269921 - Fin field effect transistors having conformal oxide layers and methods of forming same (2019-04-23),
15. 10181397 - Semiconductor device and method for forming the same (2019-01-15),

Title: The Innovative Journey of Hui-Cheng Chang

Introduction:

Hui-Cheng Chang, a pioneering inventor hailing from Tainan, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Chang's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights:

With a career spanning over two decades, Chang has established himself as a leading figure in the tech industry. His work has been instrumental in shaping the future of sustainable energy solutions.

Collaborations:

Throughout his career, Chang has collaborated with top research institutions and leading tech companies to further his innovative projects. His ability to work across disciplines has led to the successful implementation of cutting-edge technologies.

Conclusion:

In conclusion, Hui-Cheng Chang's relentless pursuit of innovation and his commitment to creating a more sustainable future have solidified his position as a visionary inventor in the field of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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