The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Oct. 28, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Ching-Feng Fu, Taichung, TW;
Yu-Chan Yen, Taipei, TW;
Chih-Hsin Ko, Kaohsiung, TW;
Chun-Hung Lee, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Hui-Cheng Chang, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 23/00 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 23/564 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H01L 21/31144 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Devices are described herein that include an epitaxial layer, a cap layer above the epitaxial layer, a gate layer adjacent to the epitaxial layer on which an etching process is performed, a trench above the cap layer, and a source/drain portion includes the epitaxial layer.