The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jan. 19, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes an n-channel, a p-channel, a first gate dielectric layer, a second gate dielectric layer, a first metal gate electrode and a second metal gate electrode. The n-channel and the p-channel are made of different materials. The first gate dielectric layer is present on at least opposite sidewalls of the n-channel. The second gate dielectric layer is present on at least opposite sidewalls of the p-channel. The first metal gate electrode is present on the first gate dielectric layer. The second metal gate electrode is present on the second gate dielectric layer. The first metal gate electrode and the second metal gate electrode are made of substantially the same material.