The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2019
Filed:
Sep. 30, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chun-Heng Chen, Hsinchu, TW;
Hui-Cheng Chang, Tainan, TW;
Hong-Fa Luan, Hsinchu, TW;
Xiong-Fei Yu, Hsinchu, TW;
Chia-Wei Hsu, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/314 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02255 (2013.01); H01L 21/0226 (2013.01); H01L 21/02233 (2013.01); H01L 21/02247 (2013.01); H01L 21/02323 (2013.01); H01L 21/02337 (2013.01); H01L 23/564 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.