Hong-Fa Luan

Title: Innovations of Hong-Fa Luan

Introduction

Hong-Fa Luan is a notable inventor based in Baoshan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advanced semiconductor devices and methods for their formation.

Latest Patents

One of his latest patents is titled "Semiconductor device and method for forming the same." This patent describes a method for forming a semiconductor device that includes receiving a semiconductor substrate with a channel. An atmosphere-modulation layer is formed over the channel, followed by an annealing process to create an interfacial layer between the channel and the atmosphere-modulation layer. Another significant patent is "Nanolaminate structure, semiconductor device and method of forming nanolaminate structure." This patent outlines a method for forming a nanolaminate structure, which involves pre-treating a semiconductor substrate that includes SiGe, forming a first metal oxide layer, and alternately stacking additional metal oxide layers to create the nanolaminate structure.

Career Highlights

Hong-Fa Luan has worked with prominent organizations, including Taiwan Semiconductor Manufacturing Company and the University of California. His experience in these institutions has allowed him to collaborate on various innovative projects in semiconductor technology.

Collaborations

Some of his notable coworkers include Chun-Heng Chen and Xiong-Fei Yu. Their collaborative efforts have contributed to advancements in the semiconductor field.

Conclusion

Hong-Fa Luan's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the development of advanced semiconductor devices.