Taiwan Semiconductor Manufacturing Comp. Ltd.

University of California

Hong-Fa Luan

Xiong-Fei Yu

Chia-Wei Hsu

Chun-Heng Chen

Hui-Cheng Chang

Wilman Tsai

Andrew C Kummel

Zi-Wei Fang

Hsiang-Pi Chang

Kasra Sardashti

Iljo Kwak

Maximillian Clemons

Scott Ueda

Mahmut Kavrik

Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.

Semiconductor device and method for forming the same

The present disclosure provides a method of forming a nanolaminate structure. First, a pre-treatment is performed on a semiconductor substrate, in which the semiconductor substrate includes SiGe. Then, a first metal oxide layer is formed on the semiconductor substrate. Then, at least one second metal oxide layer and at least one third metal oxide layer are alternately stacked on the first metal oxide layer, thereby forming a nanolaminate structure. And, a conductive gate layer is formed on the nanolaminate structure.

Nanolaminate structure, semiconductor device and method of forming nanolaminate structure

Growing community of inventors

Baoshan, Taiwan

Hong-Fa Luan