The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
May. 08, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Po-Kai Hsiao, Changhua County, TW;
Tsai-Yu Huang, Taoyuan, TW;
Hui-Cheng Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming at least one epitaxial layer over a substrate; patterning the epitaxial layer into a semiconductor fin; depositing a conformal semiconductor capping layer over the semiconductor fin, wherein the conformal semiconductor capping layer has a first portion that is amorphous; performing a thermal treatment such that the first portion of the conformal semiconductor capping layer is converted from amorphous into crystalline; depositing a dielectric material over the conformal semiconductor capping layer; annealing the dielectric material, such that the conformal semiconductor capping layer is converted into a semiconductor-containing oxide layer; recessing the dielectric material and the semiconductor-containing oxide layer to form an isolation structure around the semiconductor fin; and forming a gate structure over the semiconductor fin and the isolation structure.