Hsinchu, Taiwan

Hsin-Li Cheng

This inventor holds 30 USPTO granted patents and 17 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2003-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsin-Li Cheng. Retrieved from https://idiyas.com/inventor/hsin-li-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 90.0

Average Co-Inventor Count = 4.1

ph-index = 5

Forward Citations = 88(Granted Patents)


Location History:

  • Taipei, TW (2003)
  • Jhubei, TW (2016)
  • Jubei, TW (2017)
  • Hsinchu County, TW (2018 - 2022)
  • Hsin-Chu, TW (2010 - 2024)

Company Filing History:


Years Active: 2003-2026

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Areas of Expertise:
Trench Capacitor
Voltage Reference Circuit
Low Warpage
Silicon Implant
Thin Film Resistor
High Density Capacitor
Semiconductor Structure
Flicker Noise
Electrical Fuse
Serpentine Resistor
Manufacturing Method
30 patents (USPTO):Explore Patents

Title: Hsin-Li Cheng: Pioneering Innovations in Semiconductor Technology

Introduction

Hsin-Li Cheng is a prominent inventor based in Hsinchu, Taiwan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 24 patents, Cheng has been instrumental in developing cutting-edge solutions that enhance the performance and reliability of integrated circuits (ICs).

Latest Patents

Among Hsin-Li Cheng's latest innovations are two notable patents that showcase his expertise. The first patent focuses on a trench capacitor film scheme designed to reduce substrate warpage. This integrated circuit comprises a trench capacitor that contains a multitude of electrode structures, warping reduction structures, and capacitor dielectric structures, all expertly arranged to enhance stability within the substrate.

The second patent involves a semiconductor device engineered to minimize flicker noise. This device features a strategically placed gate electrode on a substrate with source/drain regions on either side. By incorporating a noise-reducing component and a cap layer, Cheng’s design helps to improve the overall performance of the semiconductor device, making it a vital advancement in the industry.

Career Highlights

Cheng's professional journey has been marked by his association with Taiwan Semiconductor Manufacturing Company Ltd., a leading figure in the semiconductor manufacturing sector. His work within this esteemed organization has allowed him to impact various facets of semiconductor design and functionality.

Collaborations

Throughout his career, Hsin-Li Cheng has collaborated with talented individuals such as Felix Ying-Kit Tsui and Yu-Chi Chang. These partnerships have fostered innovation and enhanced the development of advanced semiconductor technologies, reinforcing the importance of teamwork in the pursuit of groundbreaking inventions.

Conclusion

Hsin-Li Cheng stands out as a key inventor in the semiconductor field, with his 24 patents reflecting his commitment to innovation. His latest inventions, aimed at improving integrated circuit performance, demonstrate his significant role in advancing technology. As he continues to push the boundaries of semiconductor design, Cheng exemplifies the spirit of innovation that drives the industry forward.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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