The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Jul. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsin-Li Cheng, Hsin Chu, TW;
Jyun-Ying Lin, Wujie Township, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Shih-Fen Huang, Jhubei, TW;
Shu-Hui Su, Tucheng, TW;
Ting-Chen Hsu, Taichung, TW;
Tuo-Hsin Chien, Zhubei, TW;
Felix Ying-Kit Tsui, Cupertino, CA (US);
Shi-Min Wu, Changhua County, TW;
Yu-Chi Chang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated chip including a capacitor over a substrate. The capacitor includes a plurality of conductive layers and a plurality of dielectric layers. The plurality of conductive layers and dielectric layers define a base structure and a first protrusion structure extending downward from the base structure towards a bottom surface of the substrate. The first protrusion structure comprises one or more surfaces defining a first cavity. A top of the first cavity is disposed below the base structure.