The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Sep. 19, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chun-Heng Chen, Hsinchu City, TW;
Chi-Yuan Shih, Hsinchu, TW;
Hsin-Li Cheng, Hsinchu, TW;
Shih-Fen Huang, Zhubei, TW;
Tuo-Hsin Chien, Hsinchu County, TW;
Yu-Chi Chang, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Resistors and method of forming the same are provided. A device structure according to the present disclosure includes a substrate, a first intermetal dielectric (IMD) layer over the substrate, a resistor that includes a first resistor layer over the first IMD layer, a second resistor layer over the first resistor layer, and a third resistor layer over the second resistor layer, a second IMD layer over the first IMD layer and the resistor, a first contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer, and a second contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer.